Abstract
In this paper, ZnO films were grown on sapphire (0001) substrates by infrared-light-assisted pulsed-laser deposition (IRA-PLD). In addition, a nitrogen-plasma-assisted (PA-N) system was utilized for effectively doping the acceptor by radio frequency induction coupled plasma (RF-ICP). The effect of IRA-PLD and PA-N systems was investigated by studying the difference in substrate temperature with and without plasma assistance. We found that ZnO films exhibit no exciton emission with PA-N at a high temperature and that an increase in the substrate temperature yields ZnO films with a (002) and c-axis preferred orientation in a nitrogen (N2) gas atmosphere. ZnO films are changed from n-type to p-type at a substrate temperature of 673 K by IRA-PLD with an N2 background atmosphere.
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