Abstract
P-type amorphous silicon was produced by co-sputtering with Al in Ne without hydrogen. The room-temperature conductivity was varied over about nine orders of magnitude, with a corresponding Fermi level shift of about 0.7 eV towards the valence band edge, without significant change in the optical gap. Comparison of the results with those of other techniques suggests that the material has a relatively low density of defect states and a reasonable doping efficiency is achieved.
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