Abstract
The purity of the perovskite material is of paramount importance as it determines the optoelectronic properties and, hence, the device performance. However, the error during the experiment and incomplete crystallization is inevitable, leading to a low quality. Here, two p-type polymers were designed to template the crystallization of perovskite to obtain perovskite films with higher crystallinity and higher phase purity. The polymers at the perovskite/transport interface could also improve the charge transfer and, thus, the device performance. In this study, the highest efficiency device achieved an efficiency value of ~19% with improved open-circuit voltage and fill factor.
Highlights
Introduction and Interface Optimization for HighDue to the solution-processability and high performance, perovskite solar cells (PSCs) are the “rising star” in the photovoltaics field
The PCz-mCP and PTPA-mCP solutions were prepared in toluene with a concentration of 0.1 mM, which were used as anti-solvent (60 μL) for perovskite film deposition
PTPA-mCP modified perovskite film shows the shortest PL lifetime, which meanscharge the transfer between perovskite and spio-oMETAD. These results indicate an improved interfastest charge transfer between perovskite and spio-oMETAD
Summary
Due to the solution-processability and high performance, perovskite solar cells (PSCs) are the “rising star” in the photovoltaics field. (PBDB-T) [5], poly(bithiophene imide) (PBTI) [6], and dithienobenzodithiophene-based π-conjugated polymer PDTBDT-FBT [7] were introduced during the anti-solvent process, which could passivate the perovskites. These conjugated polymers could help to realize ultrafast charge transfer at the interface due to the cascade energy level landscape. Kato et al found that silver electrodes of MAPbI3 cells will turn yellow within days They proposed that Ag will migrate across the spiro-OMeTAD layer through pinholes and react with MAI to form. The highest efficiency device shows an efficiency of 19.15% with PTPA-mCP templated crystallization from 17.79% for the control device
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