Abstract
At a low temperature of 250°C, p-type nitrogen doped ZnSe epitaxial layers with a resistivity as low as 0.008 Ω · cm were grown by means of the ionized cluster beam (ICB) epitaxy technique using N 2 as dopant source. The ICB epitaxy enabled a growth rate of p-type ZnSe as high as 1–1.5 nm/s, and the nitrogen atom doping concentration can be controlled up to 10 20 cm −3 as was estimated by X-ray photoelectron spectroscopy (XPS) analysis. The structural perfection of the epitaxial layers was characterized by X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). The ZnSe lattice constant, as measured by XRD, decreased as the N concentration increased. We attribute this lattice expantion to some nitrogen atoms located at interstitial sites.
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