P-type nitrogen-doped β-Ga2O3: the role of stable shallow acceptor NO-VGa complexes.

Abstract

In-depth understanding of the acceptor states and origins of p-type conductivity is essential and critical to overcome the great challenge for the p-type doping of ultrawide-bandgap oxide semiconductors. In this study we find that stable NO-VGa complexes can be formed with ε(0/-) transition levels significantly smaller than those of the isolated NO and VGa defects using N2 as the dopant source. Due to the defect-induced crystal-field splitting of the p orbitals of Ga, O and N atoms, and the Coulomb binding between NO(II) and VGa(I), an a' doublet state at 1.43 eV and an a'' singlet state at 0.22 eV above the valence band maximum (VBM) are formed for the β-Ga2O3:NO(II)-VGa(I) complexes with an activated hole concentration of 8.5 × 1017 cm-3 at the VBM, indicating the formation of a shallow acceptor level and the feasibility to obtain p-type conductivity in β-Ga2O3 even when using N2 as the dopant source. Considering the transition from NO(II)-V0Ga(I) + e to NO(II)-V-Ga(I), an emission peak at 385 nm with a Franck-Condon shift of 1.08 eV is predicted. These findings are of general scientific significance as well as technological application significance for p-type doping of ultrawide-bandgap oxide semiconductors.