Abstract
The development of procedures for the synthesis of p-type NiO on top of non-degenerate semiconductors is of great interest due to the potential applications in several areas of microelectronics. In this work, p-type NiO films with different resistivity values are obtained by heating at different temperatures Ni(OH)2 layers electrodeposited on n-type monocrystalline Si substrates. Characterizations by X-ray diffraction and X-ray photoelectron spectroscopy have evidenced the phase change, from hexagonal β-Ni(OH)2 to cubic NiO for all treated samples, with improved crystallinity for higher heating temperatures. The effect of the electrochemical parameters and heat treatment temperatures on the thickness and surface morphology of the films was also analyzed by mechanical profilometry and scanning electron microscopy, respectively. The p-type behavior of the films and the electrical resistivity values were determined from electrical measurements using a two-point probe system in a sandwich configuration. Higher resistivity values were found for films subjected to higher heat treatment temperatures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.