P-Type LaCuOS films grown by PLD using a quaternary target fabricated by a two-step solid-state reaction/sulfurization process

Abstract

A LaCuOS target was obtained through a two-step route: first, the synthesis of the CuLaO2 compound by solid-state reaction, and subsequently its sulfurization under a sulfur atmosphere. The LaCuOS powder was used to deposition films by pulsed laser deposition at different growth times: 10, 15, 20, and 25 min. The films were deposited in vacuum at a substrate temperature of 400 °C and a wavelength of 266 nm. The structural characterization showed that the dislocation density and stress in LaCuOS films increase as the deposition time increases. The LaCuOS films exhibit optical transmittance of 52–81 % in the visible region. Electrical measurements indicate high values of hole mobility and carrier densities up to 1019 cm−3, with a p-type electrical conductivity of 0.74 S/cm; these properties suggest that LaCuOS films have the potential to be integrated as transparent material in devices.