Abstract
Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p-type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p-type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p-type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.
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