Abstract
Mg+ and Mg++P+ were introduced into GaN by ionimplantation. The structure and crystalline quality of the GaN sampleswere analysed by Rutherford backscattering and channelling spectrometrybefore (χmin = 1.6%) and after implantation(χmin = 4.1%). X-ray diffraction reveals the existence ofimplantation-induced damage in the case of post-implantation followed byrapid thermal annealing. The resistivity, average factor, carrierconcentration and carrier mobility were measured by the Hall effect. Thetransformation from n-type to p-type for GaN was observed.
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