P-type doping of GaN by magnesium ion implantation

Abstract

Magnesium ion implantation has been performed on a GaN substrate, whose surface has a high thermal stability, thus allowing postimplantation annealing without the use of a protective layer. The current–voltage characteristics of p–n diodes fabricated on GaN showed distinct rectification at a turn-on voltage of about 3 V, although the leakage current varied widely among the diodes. Coimplantation with magnesium and hydrogen ions effectively suppressed the leakage currents and device-to-device variations. In addition, an electroluminescence band was observed at wavelengths shorter than 450 nm for these diodes. These results provide strong evidence that implanted magnesium ions create acceptors in GaN.