P-Type doping of GaAs(0 0 1) layers grown by MBE using silicon as a dopant

Abstract

For the first time, a thick p-type GaAs layer was successfully grown by molecular beam epitaxy on a GaAs(0 0 1) substrate using Si as the dopant. A hole concentration in the range of 10 18 cm −3 was achieved by a nonconventional growth method involving the supply of a few monolayers of Ga atoms together with the dopant (the As 4 cell was shuttered), followed by annealing in As 4 (the Ga and Si cells were shuttered). The repetition of this sequence led to a thick p-type layer as shown by Hall and photoluminescence measurements.