P-Type μc-SiC prepared by ECR PECVD using tetramethylsilane gas

Abstract

We have prepared a p-type microcrystalline silicon carbon thin film by an electron cyclotron resonance plasma-enhanced chemical vapor deposition using a Si(CH 3) 4 + SiH 4 + B 2H 6 + H 2 gas mixture. The p-type μc-SiC had an optical band gap of around 2.4 eV, a dark conductivity of around 10 −2 S/cm and a C/Si ratio of around 0.02, which had almost similar values as the p-type μc-SiC prepared with a CH 4 + SiH 4 + B 2H 6 + H 2 gas mixture.