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Abstract
The role of hydrogen incorporation in H2/CH4 reactive ion etching (RIE) induced type-conversion of p-type HgCdTe is investigated. A model is proposed in which hydrogen is incorporated into the HgCdTe crystal lattice in at least three different forms. It is proposed that the junction formation mechanism is a mixture of RIE-induced damage and Hg interstitial formation to which hydrogen forms strong bonds, and hydrogen-induced neutralization of acceptors. Confirmation of the model is presented based on experimental secondary ion mass spectroscopy of RIE-induced junctions, transport measurements reported previously, and initial diode bake stability testing.
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