Abstract
p-to-n type conversion is obtained in Hg 1− x Zn x Te (x ≅ 0.15) by ion milling effect from low energy Ar ion beam. Several ion beam conditions including energy, current density, irradiation duration have been used. Electrical characteristics of n-type induced layers are investigated by the differential Hall method associated with magnetic field dependence of the Hall coefficient. Good quality n-type layers are obtained. The lower layer thickness found in HgZnTe compared to HgCdTe is attributed to a higher stability of the bonds. The results do not appear to be correlated with ion milling parameters.
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