Abstract

P resonant Auger spectra were measured for four insulators (, , and ) and a semiconductor (GaP). Spectator Auger peaks showed both linear energy dispersion and width sharpening around the absorption edges. These peaks are attributed to the Auger resonant Raman effect. Furthermore, it was found that only for the insulators were the Auger peaks split into spectator and normal peaks. This is explained in connection with localized quasi-bound states above the P 1s ionization threshold.

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