Abstract
ABSTRACTWe show that graphene mono-/bilayer step operates as an abrupt p-n (p-p+) junction. Due to the thickness-dependent oxidation effect, the uniform channel can be adjusted to spatially asymmetrical junction by means of electron beam irradiation. The lithography-free process on OTMS modified substrate possesses the merit of clean surface and high performance. This conveniently fabricated graphene step device opens an opportunity to study the intrinsic interface across a well defined junction.
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