Abstract
Experimental evidence shows that the 77°K zero-bias resistance-area product of Eg ≅ 0.1 eV Hg 1− x Cd x Te implanted photodiodes is limited by diffusion current if the doping level on the p-type side is of the order of 10 16cm −3 or less. Furthermore, if the doping level is kept constant as the diode cut-off wavelength decreases, the contribution of generation-recombination in the depletion layer increases. A theoretical model, mainly based on the Auger band-to-band process for carrier recombination, is assumed to explain such a behaviour for the one-sided abrupt junction. On this basis, thermal-limited diode performances are evaluated at 77°K in the whole 8–14 μm range. A quantitative comparison with the experimental results is presented.
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