Abstract
p-i-n structures have been made with avalanche blocking voltages between 1200 and 5100 V, using an Al-diffusion profile and a thick epitaxial film to obtain the buffering n-layer. The device areas are between 2.5 and 10 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Epitaxial films of ∼50-µm thickness with a very low defect density have been obtained after an in situ gas phase etching with SF <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</inf> of approximately 30 µm. The application of these p-i-n structures as a basic element for the development of very fast high voltage reverse non-blocking thyristors is briefly discussed.
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