P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Minghua Zhu,Mohammad Samizadeh Nikoo,Elison Matioli,Jun Ma,Pirouz Sohi,Luca Nela,Catherine Erine

doi:10.1109/led.2020.3037026

Minghua Zhu, Mohammad Samizadeh Nikoo + Show 5 more

Open Access

https://doi.org/10.1109/led.2020.3037026

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Abstract

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V TH ) and low on-resistance (R ON ). The p-GaN is used to engineer the band structure and reduce the carrier density (N s ) in the tri-gate structure for a high V TH . The gate control is mainly achieved from field-effect through the tri-gate sidewalls, and does not rely on injection of gate current. The MOS structure enables much larger gate voltages (V G ) and the effective sidewall modulation results in excellent switching performance at high switching frequencies. In addition, this concept eliminates the need for thin barriers (typical in p-GaN devices), which combined to the conduction channels formed at the tri-gate sidewalls, resulted in a smaller RON compared with planar p-GaN structures. The p-GaN length and trigate filling factor (FF) were optimized to achieve a good trade-off between high V TH and low R ON . The excellent channel control capability offered by the tri-gate structure led to a higher ON/OFF ratio and smaller sub-threshold slope (SS) compared to similar planar p-GaN devices. These results unveil the excellent prospects of p-GaN tri-gate MOS technology for future power electronics applications.

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