Abstract
Experimental evidence shows that non-shallow acceptor states defect complex V C d − C l T e | 0 / − and Cu substitution of Cd C u C d | 0 / − play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells. In this work, two equations are presented by using graphic method, one to determine the limit of p-doping or hole density for such non-shallow acceptor levels, and another to show the quantitative relationship of n-type donor compensation of p-type acceptors in such a material.
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