Abstract
An approach to decrease the P-doping density of graphene and increase the mobility of graphene field-effect transistors (GFETs) is reported. With a layer of natural aluminium oxide (natural-AlO x ) thin film covered on the surface of graphene, the Dirac point voltage of the GFETs decreases 25 V while it experiences the mobility increase of 42 cm2/(V s) after exposure in the atmosphere for 1 month. To understand this phenomenon, other two situations are researched, the Dirac point voltage of the identical GFETs with no thin film on graphene increases more than 15 V and its mobility decreases 90 cm2/(V s) after 1 month. The last situation is that the Dirac point voltage and the mobility have no significant changes with an AlO x deposited by electron beam evaporation (Al2O3-EBE) on graphene. These phenomena indicate that the natural-AlO x thin film is capable of reducing p-type impurities on the graphene and bringing the better reliability to the GFETs.
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