Abstract
P-doped ZnO thin films were prepared on different Si substrates by RF magnetron sputtering in Ar and O2mixed atmosphere. The P-doped ZnO films were changed from n-type to p-type by phosphorus diffusing from the n-Si substrates with higher phosphorus concentration into the ZnO films during depositing. The crystal structure of the ZnO films was examined by X-ray diffraction and confirmed to belong to wurtzite and highly c-axis oriented primarily perpendicular to the substrate. The Hall effect measurement results show that the corresponding hole concentration and risistivity of the P-doped ZnO film was 8.982×1017cm-3and 1.489 Ω•cm respectively. This reveals that the P-doped ZnO thin film is really p-type behavior.
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