Abstract
A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is discussed. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and uses Zn-diffused refractory-metal contacts. The 4100 cm/sup 2//V-s hole mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and K-factor values as high as 52 mS/mm and 140 mS/V-mm, respectively, are obtained at 77 K in p-channel FETs with 2.0- mu m gate lengths and 6.0- mu m source-drain spacings, representing state-of-the-art values for p-HFETs at similar dimensions.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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