P-channel modulation-doped GaSb field-effect transistors

Abstract

GaSb p-channel modulation-doped field-effect transistors based on a p-AlSb0.9As0.1/p-AlSb/GaSb structure have been fabricated. Transconductances as high as 50 ms/mm at room temperature and 220 to 283 ms/mm at 77 K were obtained for 1 μm gate-length devices. These 77 K transconductances represent the highest values reported for any compound p-channel heterojunction field-effect transistors.