Abstract
Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.
Highlights
Zinc oxide (ZnO) attracts considerable attention because it is an oxide semiconductor with a direct wide bandgap of 3.37 eV at room temperature, it can be developed for largearea substrates, and it exhibits high-field effect mobility
ZnO is a promising candidate for applications to optoelectronic devices such as light-emitting diodes (LEDs) [1] and laser diodes, as well as to electronic devices such as thin-film transistors (TFTs) [2,3,4,5,6]
Fujita et al [21] reported pn-junction-type nearultraviolet (UV) LEDs using these NPs on Ga-doped ZnO (GZO) films
Summary
Zinc oxide (ZnO) attracts considerable attention because it is an oxide semiconductor with a direct wide bandgap of 3.37 eV at room temperature, it can be developed for largearea substrates, and it exhibits high-field effect mobility Due to these advantages, ZnO is a promising candidate for applications to optoelectronic devices such as light-emitting diodes (LEDs) [1] and laser diodes, as well as to electronic devices such as thin-film transistors (TFTs) [2,3,4,5,6]. Fujita et al [21] reported pn-junction-type nearultraviolet (UV) LEDs using these NPs on Ga-doped ZnO (GZO) films These results suggest that doped nitrogen atoms are incorporated into oxygen sites, acting successfully as acceptors [21,22,23,24,25]. We present the first ever demonstration of pand n-channel depletion-type TFTs
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