Abstract
Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm 2 . The as-grown Si p + in + structures were synthesised using solid source molecular beam epitaxy, incorporating B and P delta-doped layers. Both structures have shown thermal stability after 1 min post-growth anneals up through 675degC and the PVCR improves to 2.8 for a 575degC 1 min anneal.
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