Abstract
In this paper, we reported a GaN/InGaN multiple quantum wells (MQWs) micro light emitting diode (Micro‐LED) device with green light emission. For electronic performance, the Micro‐LED device exhibited a forward voltage of only 2.61 V at the current density of 10 A/cm2. For illumination performance, the emission light had 519 nm peak wavelength with a full width at half maximum (FWHM) of 22 nm. Furthermore, the diode ideality factor (n) was calculated and analyzed with different temperature categories (303 K to 573 K) and pixel sizes (30 μm to 200 μm), revealing a lower value of n with temperature growing and device scaling down.
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