Abstract
This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N2O plasma treatment and proposes a solution according to the presence of N2O plasma in the subsequent postprocess. In mass manufacture of a‐IGZO TFTs, N2O plasma is usually completely removed during the subsequent post‐plasma treatment processes. However, we maintained the presence of N2O plasma and analyzed its effect on device performance and reliability. While a‐IGZO TFTs fabricated with N2O plasmaremoved during the post‐process exhibited non‐ideal negative Vth shifts under PBTS, the devices fabricated with N2O plasma present during post‐processing showed superior electrical performance and reliability, avoiding the non‐ideal Vth shift phenomenon. This study shows that maintaining N2O plasma during the post‐process is an effective method for ensuring device reliability as well as improved performance of a‐IGZO TFTs in mass production.
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