Abstract
In the OLED panel, we have been investigated to understand diffusion behaviors of light element in various perspectives. It has evaluated by using advanced analytical tools such nano‐SIMS. we could find the diffused hydrogen from insulating film in channel area of bad sample. Increased hydrogen is directly attributed to the negative Vth shift. Also, we make the cross sectional sample and find the diffusion source of internal outgassing using the cross‐sectional Ion Mapping analysis method.
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