Abstract
AbstractThin beam laser crystallization technology is presented. It has the features of long beam length >730mm, controllable thin beam width 3∼22um and high laser frequency 3000∼6000Hz. Due to the features, it can process display transistor backplane with small laser step size 1∼4um while keeping high production throughput. The effect of small laser step size related to poly‐crystalline silicon transistor uniformity is investigated here. The transistor channel of the display backplane can cross multiple step size areas that result in an averaging effect of the laser pulses and obtain uniform transistor characteristics.
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