Abstract

We investigated the charge transport properties of the random networks of single‐walled carbon nanotube (SWCNT) based thin film transistors (TFTs) by using the transient analysis and compared its non‐quasi‐static (NQS) characteristics with steady‐state characteristics. Using NQS measurement we extracted the dynamic mobility (µdynamic) and the velocity distribution of the dynamic charge carriers. Our results provide additional information to understand charge transport mechanisms in SWCNT‐FETs for active‐matrix backplaneshis.

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