Abstract

AlGaInP‐based red light‐emitting diode (LED) arrays are a promising technology. However, due to the difficulty of mesa etching, the small size of red Micro‐LEDs is easily affected by edge effects, resulting in low light output power and difficult to meet the requirements of lighting display. We introduce the fabrication method of flip‐chip red Micro‐LED and exhibit the fabrication of devices with good electrical properties and stable optical properties.

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