Abstract

AbstractWe designed a new pixel layout to improve the aperture ratio of IPS mode TFT‐LCD(H‐IPS). This H‐IPS pixel layout design has reduced the width of side common electrode used to minimize the cross talk and light leakage which is induced by interference between data bus line and side common electrode of conventional IPS mode. The side common electrodes of a pixel can be reduced by horizontal layout of interdigital electrode pattern where conventional IPS pixel designs have vertical layout of interdigital electrodes. We realized 15 inch XGA TFT LCD of H‐IPS structure which has aperture ratio as much as 1.2 times of corresponding conventional IPS pixel design.

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