Abstract
Quantum dots (QDs) are chemically produced materials with a variety of interesting features that can be employed in various applications ranging from light‐emitting diodes (LEDs) to sensors. In this work, we report an infrared QDs‐based LED (IRLED), in which the QDs are treated with ligands and formed a smooth emissive layer of the device. The ligand treatment steps ensure the quality and morphology of the QDs emissive layer. During three weeks, the fabricated IRLED device achieved an equable current, steady electroluminescence (EL) peak of 1197 nm, a wide full width at half maximum (FWHM) of 226 nm, and a high EQE of 9%.
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