Abstract
AbstractCrystallization of a‐Si by doubled frequency YAG laser using a self‐heating layer technology was proposed in this paper. The grain size and the hall mobility of the resulted poly‐Si thin film were enhanced up to almost two times by using the self‐heating layer technology. This technology has a dual heating effect: heat‐retaining and self‐heating with an easier process and wider process window, compared to the conventional capping‐layer technology.
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