Abstract

The environmental (or strain) dependence of the electron spin resonanceg tensor is calculated for a-Si using a tight binding model of a dangling bond with Bethe lattice back bonding. We find that the variations ofg∥ andg⊥ are almost identical and we obtain a value ofg∥ − g⊥= 0.0025which is considerably smaller than the value for thePb center at the Si/SiO2 interface. We obtain a good fit to experimental data assuming only a Gaussian distribution of bond angles with an rms deviation of about 9°, which is the generally accepted value for bond angle distortions at tetrahedral sites in a-Si.

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