Abstract
AbstractA novel hydrogenated amorphous silicon thin‐film transistor (a‐Si:H TFT) integrated gate driver circuit with 33% ac‐driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac‐driving structure, and the gate driver can stably operate over 240‐h driving at high temperature (60 °C).
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