Abstract
A novel pixel circuit providing expanded data voltage range is proposed for high resolution and high image quality organic light‐emitting diode‐on‐silicon (OLEDoS) microdisplay applications. The proposed pixel circuit adopts a structure of four series connected NMOSFETs (4‐SCN) to expand the input data voltage range, within which the circuit operates in the subthreshold region. In addition, the pixel circuit has improved image quality by introducing a compensation scheme. The proposed circuit is verified by the simulation based on a 0.18 μm BCDlite Isolation process. The proposed circuit can be integrated into a unit sub‐pixel area of 2.9 × 8.7 μm2. The simulation results show that the input data voltage range of the proposed pixel circuit is 6.26 times wider than that of the traditional 2T1C pixel circuit [1], which is 4.42V. And the emission current deviation ranges from ‐4.7% to +4.2% under the threshold voltage variation of ±5 mV, which is 31.01% for a traditional 2T1C pixel circuit [1].
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