Abstract
In this paper, we evaluate the feasibility of the split capacitance‐voltage (C–V) technique for mobility extraction in self‐aligned top‐gate (SATG) amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs) with short channel down to 5 μm. The accuracy of the effective mobility (μeff) extraction approach is greatly enhanced by properly de‐embedding the disturbances, including channel length reduction (ΔL), inner fringing capacitance (Cif), and source/drain access resistance (RSD). The results show that the parasitic bias‐dependent RSD and Cif in the inner fringe regions of the channel account for the underestimation of μeff on short‐channel devices.
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