Abstract
GE(M1) and SE (M2) two metal film layers need to be patterned by wet etching solution. If the taper is too high after etching, it will lead to light leakage from the metal edge, which will reduce the contrast (GE only) and poor coverage of the insulating layer. If it is too low, the resistance value of the fanout will change greatly, and the photoresist will fall and lead to the failure of the metal line. In this article, we mainly analyze how to develop the specification of the taper for GE/SE layer metal wet etchant.
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