Abstract
In this paper, the Sr‐doped In2O3 thin film is fabricated by aqueous route and the stability of InSrO thin film transistor under negative bias illumination stress (NBIS) is investigated. It is found that Sr can effectively improve the stability of In2O3 TFTs under NBIS, which is due to the reduction of oxygen vacancies. The XPS measurement is tested to analyze the variation of oxygen vacancy concentration. The density of states is calculated to further confirm the decrease of total trap state caused by Sr doping.
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