Abstract
The photocurrent and responsivity characteristics of amorphous InZnO (a‐IZO) thin film transistors (TFTs) under different Ar:O2 gas flow ratio when growing the IZO active layer by sputtering are investigated. As the Ar:O2 gas flow ratio increases, the photocurrent and responsivity increase by nearly two orders of magnitude, under the same light power density at a wavelength of 400 nm to 475 nm light illumination.
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