Abstract
AbstractWe investigated the effect of the light‐induced bias instability of indium‐gallium‐zinc oxide(IGZO) thin film transistors. The IGZO TFT exhibited the excellent subthreshold gate swing of 0.12V/decade, Vth of −0.5V, and high Ion/off ratio of >109 as well as a high field‐effect mobility of 26.7 cm2/Vs. The Vth is not changed after positive bias illumination stress (PBIS) for 10000sec. However, the Vth is −8V after negative bias illumination stress (NBIS)for 10000sec. This phenomenon can be attributed the trapping of the photon‐induced charges into the gate dielectric/active interface. We fabricated transparent AM‐OLED driven by highly stable bottom gate IGZO TFT array
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