Abstract
Dual-gate thin-film transistors (TFTs) structures based on indium-gallium-zinc oxide (IGZO) with different bottom-gate structures of etch-stop (ES) and elevated-metal (EM) have been compared. With the capability of realizing thinner top-gate insulator layer and of both gate electrodes achieving full control of the channel, it is concluded that a dual-gate TFT with a top-gate electrode inserted between the channel and source/drain metal electrodes based on the EM structure is a more suitable choice than based on ES structure.
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