Abstract
AbstractField emission display (FED) is one of the most promising flat panel displays (FPD), which requires significantly high vacuum for providing long‐term performance and ensuring reliability. In this paper, the glass‐to‐glass electrostatic bonding is presented for providing in‐situ vacuum packaging of FED in ultra high vacuum (UHV) chamber, which is based on conventional Si‐to‐glass anodic bonding mechanism. This bonding method is based on conventional Si‐to‐glass anodic bonding mechanism. Using RF sputter deposition, amorphous silicon films have been formed on Sn‐doped In203 (ITO) layer coated glass substrates. Secondary ion mass spectroscopy (SIMS) was used to confirm the kinetics of glass‐to‐glass electrostatic bonding. In order to investigate the applicability of this bonding technique to in‐situ vacuum packaging of FED, the hermetic sealing test of FED panel whose exhausting hole was sealed by this technique was experimented under 10−8 Torr vacuum level. This technique is suitable for mass production environments since it is capable of high speed sealing and eliminating the outgassing problem.
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