Abstract
In this paper, we present the development of a dual‐gate (DG) architecture for hydrogenated amorphous silicon thin film transistors (a‐Si:H TFTs). The aim is to address the challenges of low on‐state current (Ion) and light‐induced degradation in traditional single‐gate (SG) TFTs. The experimental results demonstrate that the DG‐TFT exhibits significantly higher Ion compared to the SG‐TFT, and the improvement depends on the thickness of the top gate insulator. Additionally, the threshold voltage (Vth) can be adjusted by applying the top gate voltage, allowing for a full‐ swing modulation coefficient of approximately 0.2. To ensure long‐term stability, a light‐blocking layer has been incorporated as the top gate electrode, enabling the DG‐ TFT to maintain its initial properties even under intense illumination conditions of up to 28,000 nits.
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