P‐3: Effects of Negative Bias Illumination Stress on IGZO Device and Luminance Behaviors in OLED Display Panel Operated by AC Conditions

Abstract

Effects of light on InGaZnO (IGZO) thin film transistors were investigated under the AC gate bias illumination stress. DC NBIS on IGZO device results in dramatic negative Vth shifts. Whereas, Vth shift tends to disappear when the specific AC gate stress is applied with light exposure. We found that NBIS effect is released in specific pulse peak bias zone for fixed pulse frequency, base pulse voltage and duty. Hence, if we employ the pulse shape in specific zone, intrinsic reliability concerns over IGZO device particularly with NBIS would not be technical huddle for volume manufacturing production.