P.3.c.078 Catechol-O-methyltransferase gene polymorphism in symptomatology of schizophrenia

Abstract

We report on the – to our knowledge – first successful realization of Si0.54Ge0.45C0.012 p-channel MODFETs directly on Si without any SiGe buffer layer. The incorporation of small amounts of C into SiGe layers with high Ge content reduces the compressive strain, resulting in an improved stability, an increased band gap ΔEg and a sufficient valence band discontinuity ΔEV. Typical Hall mobilities and hole densities are μh(300 K)=113 cm2/V s, ps(300 K)=1.4×1012 cm−2, μh(77 K)=236 cm2/V s, ps(77 K)=0.9×1012 cm−2. Room temperature transconductances of gme=57 mS/mm and saturation currents of IDSS=40 mA/mm, and respective 77 K data of gme=70 mS/mm and IDSS=63 mA/mm are found for the 0.75 μm gate-length, non-recessed test devices, which have been fabricated in a non-self-aligned process.