Abstract
A photosensitive TFT sensor called bias TFT fabricated using simple amorphous silicon process in this paper. The photosensitive current of bias TFT is linearly related to the brightness of the top light source and inversely proportional to the size of the bias region. The photosensitivity current can be up to 10E‐8 amperes under 100 nits illumination. Among four shapes of bias TFTs, L‐type TFTs have the highest photo current.
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