Abstract
AbstractA‐Si:H TFTs having channel widths ranging from 40 μm to 48,000 μm were successfully fabricated and investigated for characterization of electrical dependence on channel width. TFTs with a critical channel width larger than 10,000 μm show width‐normalized drain current increases significantly even at the low lateral electrical field of 1.9 MV/m. for a critical bias condition, width‐normalized drain current has the dependency on channel width, resulting from the increased field effect mobility from 0.722 cm2/V‐sec to 1.6 cm2/V‐sec at VGS=12 V due to the dissipated power at the drain edge and the NPN bipolar action.
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